Datasheet4U Logo Datasheet4U.com

2SB786 - PNP Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min) High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -0.5A) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed switchi

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB788 Silicon PNP Transistor Panasonic Semiconductor
2SB789 Silicon PNP Transistor Panasonic Semiconductor
2SB789A Silicon PNP Transistor Panasonic Semiconductor
2SB703 SILICON POWER TRANSISTOR SavantIC
2SB705 Silicon PNP Power Transistors SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SB781 PNP Transistor
2SB782 PNP Transistor
2SB783 PNP Transistor
2SB703 PNP Transistor
2SB705 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB786 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -0.5A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range -0.