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2SB794 - PNP Transistor

General Description

High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1A) Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.) @IC= -1A Built-in a dumper diode at C-E Complement to Type 2SD985 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC

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isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB794 DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1A) · Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.) @IC= -1A ·Built-in a dumper diode at C-E ·Complement to Type 2SD985 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier ,hammer driver and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -1.