Datasheet4U Logo Datasheet4U.com

2SB823 - PNP Transistor

📥 Download Datasheet

Preview of 2SB823 PDF
datasheet Preview Page 2

Datasheet Details

Part number 2SB823
Manufacturer INCHANGE
File Size 183.96 KB
Description PNP Transistor
Datasheet download datasheet 2SB823-INCHANGE.pdf

2SB823 Product details

Description

Collector-Emitter Breakdown Voltage V(BR)CEO = -100V(Min) Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -6A Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT CBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitt

📁 2SB823 Similar Datasheet

  • 2SB821 - Silicon PNP Power Transistors (Inchange Semiconductor)
  • 2SB822 - Medium power Transistor (Rohm)
  • 2SB824 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB825 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB826 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB827 - PNP/NPN Epitaxial Planar Silicon Tranasistors (Sanyo Semicon Device)
  • 2SB828 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB829 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
Other Datasheets by INCHANGE
Published: |