2SB823 Overview
·Collector-Emitter Breakdown Voltage V(BR)CEO = -100V(Min) ·Low Collector Saturation Voltage : isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB823 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA.