Collector-Emitter Breakdown Voltage
V(BR)CEO = -100V(Min)
Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -6A
Wide Area of Safe Operation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in general
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB823
DESCRIPTION ·Collector-Emitter Breakdown Voltage
V(BR)CEO = -100V(Min) ·Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -6A ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose amplifer and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
CBO
Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-10
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website： www.
2SB823 Datasheet
