2SB848 - PNP Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) Good Linearity of hFE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=2

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Datasheet Details

Part number	2SB848
Manufacturer	Inchange Semiconductor
File Size	188.49 KB
Description	PNP Transistor
Datasheet	2SB848 Datasheet

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB848 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICP Collector Current Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.