| Part number | 2SB861 |
|---|---|
| Datasheet | 2SB861-INCHANGE.pdf |
| File Size | 212.61 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
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·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB861 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SB861 | Silicon PNP Transistor | Hitachi Semiconductor |
 |
2SB861 | PNP Epitaxial Silicon Transistor | GME |
 |
2SB861 | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SB860 | PNP Transistor |
| 2SB863 | PNP Transistor |
| 2SB867 | PNP Transistor |
| 2SB868 | PNP Transistor |
| 2SB869 | PNP Transistor |
| 2SB812 | PNP Transistor |
| 2SB813 | PNP Transistor |
| 2SB816 | PNP Transistor |
| 2SB817C | PNP Transistor |
| 2SB817E | PNP Transistor |
