2SB861
2SB861 is PNP Epitaxial Silicon Transistor manufactured by Galaxy Microelectronics.
FEATURES
- Low Frequency Power Amplifer Coloe
TV Vertical Deflection Output plementary Pb
Pair With 2SD1138.
Lead-free
Production specification
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-200
VCEO VEBO IC PC Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Continuous Peak
Collector Dissipation
Ta=25℃ Tc=25℃
Junction and Storage Temperature
-150
-6 V
-2 A
-5
1.8 W
-45 to +150 ℃
X032 Rev.A
.gmesemi.
Production specification
PNP Epitaxial Silicon Transistor
ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions
MIN Typ MAX...
