2SB861
2SB861 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min)
- Wide Area of Safe Operation
- plement to Type 2SD1138
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Developed for low frequency power amplifier color TV vertical deflection output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
VCEO
Collector-Emitter Voltage
-150
VEBO
Emitter-Base Voltage
-6
Collector Current-Continuous
-2
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
Junction Temperature
-5
1.8...
