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2SB861 - PNP Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) Wide Area of Safe Operation Complement to Type 2SD1138 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for low frequency power amplifier color TV verti

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isc Silicon PNP Power Transistor 2SB861 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD1138 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Developed for low frequency power amplifier color TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 1.