Datasheet Details
| Part number | 2SB861 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.61 KB |
| Description | PNP Transistor |
| Datasheet | 2SB861-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB861.
| Part number | 2SB861 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.61 KB |
| Description | PNP Transistor |
| Datasheet | 2SB861-INCHANGE.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Wide Area of Safe Operation ·plement to Type 2SD1138 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Developed for low frequency power amplifier color TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 1.8 W 30 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB861 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB861 | Silicon PNP Transistor | Hitachi Semiconductor |
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2SB861 | PNP Epitaxial Silicon Transistor | GME |
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2SB861 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SB867 | PNP Transistor |
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| 2SB869 | PNP Transistor |
| 2SB812 | PNP Transistor |
| 2SB813 | PNP Transistor |
| 2SB816 | PNP Transistor |
| 2SB817C | PNP Transistor |
| 2SB817E | PNP Transistor |