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2SB901 - PNP Transistor

General Description

Collector-Emitter BreakdownVoltage- : V(BR)CEO= -60V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -2A Wide area of safe operation Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB901 DESCRIPTION ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -2A ·Wide area of safe operation ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications .