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2SB991 - PNP Transistor

General Description

Collector-Emitter BreakdownVoltage- : V(BR)CEO= -180V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -0.5A Wide area of safe operation Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB991 DESCRIPTION ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -180V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -0.5A ·Wide area of safe operation ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.