2SC1024 - NPN Transistor

Inchange Semiconductor

General Description

DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 50V(Min)

and reliable operation.

Designed for use in general purpose power amplifier and switching applications

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2SC1024 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SC1024
Manufacturer	Inchange Semiconductor
File Size	178.03 KB
Description	NPN Transistor
Datasheet	2SC1024 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1024 DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 50V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO IC ICM IB PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 5 V 3.0 A 5.0 A 1.