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2SC1034 - NPN Transistor

General Description

DC Current Gain -hFE = 4(Min)@ IC= 0.75A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min)

and reliable operation.

Designed for use in general purpose power amplifier and switching applications

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1034 DESCRIPTION ·DC Current Gain -hFE = 4(Min)@ IC= 0.75A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 700 V VEBO IC ICM PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 5 V 1.0 A 5.