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2SC1106 - NPN Transistor

General Description

With TO-3 Package High power dissipation High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For voltage regulators,switching mode power supply applications ABSOLUTE MAXIMUM RATIN

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1106 DESCRIPTION ·With TO-3 Package ·High power dissipation ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For voltage regulators,switching mode power supply applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 350 V 250 V 6 V 2 A 80 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.