2SC1114 - NPN Transistor

Inchange Semiconductor

General Description

With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

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2SC1114 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SC1114
Manufacturer	Inchange Semiconductor
File Size	172.90 KB
Description	NPN Transistor
Datasheet	2SC1114 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1114 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 325 V 300 V 7 V 4 A 100 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.