2SC1163 - NPN Transistor

Inchange Semiconductor

General Description

High Collector Current IC= 0.1A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Good Linearity of hFE Low Collector Saturation Voltage

and reliable operation.

Designed for low frequency

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2SC1163 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SC1163
Manufacturer	Inchange Semiconductor
File Size	178.78 KB
Description	NPN Transistor
Datasheet	2SC1163 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1163 DESCRIPTION ·High Collector Current IC= 0.1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.1 A 20.8 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.