High Collector Current IC= 2.0A
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 35V(Min)
Good Linearity of hFE
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency power amplifi
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1449
DESCRIPTION ·High Collector Current IC= 2.0A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 35V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
35
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
2.0
A
1 W
10
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SC1449 Datasheet
