Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max) @IC= 50mA
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in line
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1507
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max) @IC= 50mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in line-operated color TV chroma output Circuits and sound output circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
200
mA
15
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website： www.
2SC1507 Datasheet
