Silicon NPN epitaxial planar type
Low Collector-Emitter Breakdown Voltage
Good Linearity of hFE
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low voltage type medium output power
ampli
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1568
DESCRIPTION ·Silicon NPN epitaxial planar type ·Low Collector-Emitter Breakdown Voltage ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low voltage type medium output power
amplifications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
18
V
VCEO
Collector-Emitter Voltage
18
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
1
A
0.12 W
1.2
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SC1568 Datasheet
