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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1672
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 120V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
25
A
120
W
175
℃
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Rresistance,Junction to Case 1.