Silicon NPN triple diffused mesa
High breakdown voltage
Large collector dissipation
Complementary pair with 2SA843
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
AF power amplifier
Color TV
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1683
DESCRIPTION ·Silicon NPN triple diffused mesa ·High breakdown voltage ·Large collector dissipation ·Complementary pair with 2SA843 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·AF power amplifier ·Color TV vertical deflection output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.5
A
5 W
20
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SC1683 Datasheet
