2SC1722 - NPN Transistor

Inchange Semiconductor

General Description

Silicon NPN triple diffused mesa High breakdown voltage Large collector dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency power amplifier TV horizontal/vertical drivers

📥 Download Datasheet

2SC1722 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SC1722
Manufacturer	Inchange Semiconductor
File Size	181.22 KB
Description	NPN Transistor
Datasheet	2SC1722 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SC1722	SILICON POWER TRANSISTOR	SavantIC
2SC1723	SILICON POWER TRANSISTOR	SavantIC
2SC1728	Silicon NPN Power Transistor	Inchange Semiconductor
2SC1728	Transistor	Sony
2SC1729	NPN Transistor	Mitsubishi Electric Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number	Description
2SC1723	NPN Transistor
2SC1730	Silicon NPN RF Transistor
2SC1755	NPN Transistor
2SC1756	NPN Transistor
2SC1777	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1722 DESCRIPTION ·Silicon NPN triple diffused mesa ·High breakdown voltage ·Large collector dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency power amplifier ·TV horizontal/vertical drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 1.8 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.