Silicon NPN triple diffused LTP
High breakdown voltage
Large collector dissipation
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Low frequency high voltage power amplifier
TV power supply driv
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1723
DESCRIPTION ·Silicon NPN triple diffused LTP ·High breakdown voltage ·Large collector dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Low frequency high voltage power amplifier ·TV power supply drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
300
V
VCEO Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.2
A
15
W
150
℃
Tstg
Storage Temperature Range
-45~150 ℃
isc website：www.iscsemi.
2SC1723 Datasheet
