High breakdown voltage
Large collector dissipation
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
AF output of color TV for video output
AF output of B/W TV
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1756
DESCRIPTION ·High breakdown voltage ·Large collector dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·AF output of color TV for video output ·AF output of B/W TV
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
300
V
VCEO Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.2
A
15
W
150
℃
Tstg
Storage Temperature Range
-45~150 ℃
isc website:www.iscsemi.