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2SC1785 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- VCEO(SUS)= 200V(Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1785 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 200V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 15 A 100 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Rresistance,Junction to Case 1.