2SC1826 - NPN Transistor

Inchange Semiconductor

General Description

High breakdown voltage Large collector dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UN

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Datasheet Details

Part number	2SC1826
Manufacturer	Inchange Semiconductor
File Size	180.83 KB
Description	NPN Transistor
Datasheet	2SC1826 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1826 DESCRIPTION ·High breakdown voltage ·Large collector dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 30 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.