Silicon NPN epitaxial planar type
Low collector to emitter saturation voltage
Output of 3W can be obtained by a complementary
with 2SA0885
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Suited for m
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isc Silicon NPN Power Transistor
DESCRIPTION ·Silicon NPN epitaxial planar type ·Low collector to emitter saturation voltage ·Output of 3W can be obtained by a complementary
with 2SA0885 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Suited for medium output power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
45
V
VCEO
Collector-Emitter Voltage
35
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.5
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3.0
A
1.
2SC1846 Datasheet
