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2SC1848 - NPN Transistor

General Description

Silicon NPN epitaxial planar High voltage Complement to Type 2SA887 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1848 DESCRIPTION ·Silicon NPN epitaxial planar ·High voltage ·Complement to Type 2SA887 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE 70 50 5 2 1.2 UNIT V V V A w 10 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.