High DC Current Gain
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 120V(Min)
Low Collector-Emitter Saturation Voltage
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for general purpos
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isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SC1880
DESCRIPTION ·High DC Current Gain ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 120V(Min) ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications.