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2SC1880 - NPN Transistor

General Description

High DC Current Gain Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min) Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpos

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SC1880 DESCRIPTION ·High DC Current Gain ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min) ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.