2SC1893
DESCRIPTION
- With TO-3 Package
- Low collector saturation voltage
- Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
- Designed for switching and wide-band amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO IC PC TJ Tstg
Emitter-Base Voltage
Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
Storage Temperature Range
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 2.5 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
VBE(on) Base-Emitter On...
