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2SC1904 - NPN Transistor

General Description

Low collector to emitter saturation voltage Output of 1W can be obtained by a complementary with 2SA899 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplification ABSOLUTE MAXIMUM

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1904 DESCRIPTION ·Low collector to emitter saturation voltage ·Output of 1W can be obtained by a complementary with 2SA899 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 mA 1 W 4 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.