Collector-Base Breakdown Voltage
: V(BR)CBO=160V(Min)
Withstands worst overload conditions.
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Design for used in transceiver power output applications
ABSOLU
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1975
DESCRIPTION ·Collector-Base Breakdown Voltage
: V(BR)CBO=160V(Min) ·Withstands worst overload conditions. ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Design for used in transceiver power output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
120
V
VCER
Collector-Emitter Voltage
90
V
VEBO
Emitter-Base Voltage
5
V
ICM
Collector Current
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
12
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SC1975 Datasheet
