2SC2028 - NPN Transistor

Inchange Semiconductor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) Good Linearity of hFE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATING

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Datasheet Details

Part number	2SC2028
Manufacturer	Inchange Semiconductor
File Size	180.57 KB
Description	NPN Transistor
Datasheet	2SC2028 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2028 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.5 A 5 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.