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2SC2556 - NPN Transistor

General Description

High transistor frequency Low Saturation Voltage High VCBO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency output amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2556 DESCRIPTION ·High transistor frequency ·Low Saturation Voltage ·High VCBO ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency output amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCER Collector-Emitter Voltage RBE=150Ω 130 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature Tstg Storage Temperature Range 1.5 A 5 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.