Datasheet4U Logo Datasheet4U.com

2SC2590 - NPN Transistor

General Description

Silicon NPN epitaxial planar type High transition frequency Complementary to 2SA1110 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC2590 Silicon NPN Transistor Panasonic Semiconductor
2SC2590 SILICON POWER TRANSISTOR SavantIC
2SC2591 (2SC2591 / 2SC2592) SILICON POWER TRANSISTOR SavantIC
2SC2592 (2SC2591 / 2SC2592) SILICON POWER TRANSISTOR SavantIC
2SC2594 Silicon NPN Transistor Panasonic

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC2592 NPN Transistor
2SC2594 NPN Transistor
2SC2501 NPN Transistor
2SC2502 NPN Transistor
2SC2516 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2590 DESCRIPTION ·Silicon NPN epitaxial planar type ·High transition frequency ·Complementary to 2SA1110 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage RBE=150Ω 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.5 A ICM Collector Current-Peak PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature Tstg Storage Temperature Range 1.0 A 1.2 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.