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isc Silicon NPN Power Transistors
INCHANGE Semiconductor
2SC2592
DESCRIPTION ·Silicon NPN epitaxial planar type ·High transition frequency ·Complement to Type 2SA1112 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·AF Driver,High power Amplifier complementary
Pairs with 2SA1112.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180
V
VCEO
Collector-Emitter Voltage
180
V
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
5
V
1.0
A
20
W
150
℃
-55~150 ℃
isc website:www.iscsemi.