High voltage
Low Saturation Voltage
Complementary to 2SA1142 PNP transistor
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
The 2SC2682 is designed for use in audio frequency
power amplifier
ABSOLUT
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2682
DESCRIPTION ·High voltage ·Low Saturation Voltage ·Complementary to 2SA1142 PNP transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·The 2SC2682 is designed for use in audio frequency
power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
180
V
VCER
Collector-Emitter Voltage RBE=150Ω
180
V
VCEO Collector-Emitter Voltage
180
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ Tc=25℃
TJ
Junction Temperature
0.1
A
10
W
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SC2682 Datasheet
