| Part number | 2SC2712 |
|---|---|
| Datasheet | 2SC2712-INCHANGE.pdf |
| File Size | 202.78 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 BVCEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 BVEBO Emitter-Base Breakdown Voltage IE= 0.1mA.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC2712 | Silicon NPN Transistor | Toshiba Semiconductor |
 |
2SC2712 | NPN TRANSISTOR | AiT Semiconductor |
 |
2SC2712 | NPN Silicon Epitaxial Planar Transistor | GME |
 |
2SC2712 | AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR | UTC |
 |
2SC2712 | Silicon NPN Transistors | Weitron Technology |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SC2705 | NPN Transistor |
| 2SC2706 | NPN Transistor |
| 2SC2723 | NPN Transistor |
| 2SC2739 | NPN Transistor |
| 2SC2740 | NPN Transistor |
| 2SC2749 | NPN Transistor |
| 2SC2750 | Silicon NPN Power Transistor |
| 2SC2751 | NPN Transistor |
| 2SC2752 | NPN Transistor |
| 2SC2757 | Silicon Power Transistor |
