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2SC2723 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purp

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2723 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.