Datasheet Details
| Part number | 2SC2791 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.95 KB |
| Description | NPN Transistor |
| Download | 2SC2791 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2791 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.95 KB |
| Description | NPN Transistor |
| Download | 2SC2791 Download (PDF) |
|
|
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed and high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2791 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC2791 | SILICON POWER TRANSISTOR | SavantIC |
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2SC2791 | Silicon NPN Transistor | Toshiba |
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