The 2SC2791 is a SILICON POWER TRANSISTOR.
SavantIC
·With TO-3 package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·High speed and high voltage switching ·Switching regulator ·High speed DC-DC converter PINNING(see Fig.2) .
er breakdown voltage IC=10mA ;IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 900 V VCE(sat) VBE(sat) ICBO Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V Collector cut-off current VCB=800V; IE=0 100.
Inchange Semiconductor
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed and.
A; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC C.
Toshiba
: SILICON NPN TRIPLE DIFFUSED TYPE I 3 2SC2791 HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. FEATURES . Excellent S.
. Excellent Switching Times : t r=1.0AS (Max.), t f =1.0AS (Max. ) (Ic=3A) . High Collector Breakdown Voltage : Vceo=8 °0v Unit in mm ZteSOMAX , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 900 V Collector-Emitter Voltage VcEO 800 V Emitter-Bas.
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| No distributor offers were returned for this part. | |||
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SC2791 | Toshiba | Silicon NPN Triple Diffused Type Transistor |