2SC2791 Description
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SC2791 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 900 V VCE(sat) VBE(sat) ICBO Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V Base-emitter saturation voltage IC=3A;.