2SC2790 - Silicon NPN Transistor

Toshiba

Key Features

. Excellent Switching Times : t r =1.0/is Max. , tf=1.0;us Max. at I C =0.5A . High Collector Breakdown Voltage : VcE0=800V.

2SC2790 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC2790
Manufacturer	Toshiba
File Size	161.24 KB
Description	Silicon NPN Transistor
Datasheet	2SC2790 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN TRIPLE DIFFUSED TYPE 2SC2790 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC -DC CONVERTER APPLICATION. INDUSTRIAL APPLICATIONS Unit in mm 02&OMAX FEATURES: . Excellent Switching Times : t r =1.0/is Max. , tf=1.0;us Max. at I C =0.5A . High Collector Breakdown Voltage : VcE0=800V MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector - Base Voltage VCBO 850 Collector - Emitter Voltage VCEO 800 Emitter - Base Voltage VEBO Collector Current Base Current Collector Power Dissipation (Tc=25QQ Junction Temperature Storage Temperature Range ic IB PC T-i Tstg ELECTRICAL CHARACTERISTICS (T a=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current lEBO 80 150 -55-150 1. BASE 2.