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2SC2964 - NPN Transistor

General Description

Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage

Performance and reliable operation.

Switching regulator Motor controls Deflections circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistor isc Product Specification 2SC2964 DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation. APPLICATIONS ·Switching regulator ·Motor controls ·Deflections circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current 5 A PC Collector Power Dissipation@TC=25℃ 150 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.0 ℃/W isc website：www.