Datasheet Details
| Part number | 2SC3026 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.31 KB |
| Description | NPN Transistor |
| Download | 2SC3026 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor 2SC3026.
| Part number | 2SC3026 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.31 KB |
| Description | NPN Transistor |
| Download | 2SC3026 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage power switching character display horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 6 A IC(surge) Collector Current-Surge PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 50 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3026 | Silicon power Transistor | SavantIC |
| Part Number | Description |
|---|---|
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| 2SC3040 | NPN Transistor |
| 2SC3041 | NPN Transistor |
| 2SC3042 | NPN Transistor |
| 2SC3043 | NPN Transistor |
| 2SC3047 | NPN Transistor |