2SC3032 Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SC3032 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB=900V;.