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2SC3157 - NPN Transistor

General Description

Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.)@IC= 5A Fast Switching Speed Complement to Type 2SA1261 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for u

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isc Silicon NPN Power Transistor 2SC3157 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.)@IC= 5A ·Fast Switching Speed ·Complement to Type 2SA1261 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reglators, DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7.