Collector-Emiiter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.)
Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 3A
High Speed Switching
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high speed switchin
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emiiter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
15
A
2 W
40
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC3170
·
isc website：www.iscsemi.
2SC3170 Datasheet
