2SC3175 - NPN Transistor

Inchange Semiconductor

General Description

Low Collector Saturation Voltage High switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for use in high definition CRT display(VCC=12 to 24V) ABSOLUTE MAXIMUM RATINGS(Ta=2

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Datasheet Details

Part number	2SC3175
Manufacturer	Inchange Semiconductor
File Size	179.92 KB
Description	NPN Transistor
Datasheet	2SC3175 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3175 DESCRIPTION ·Low Collector Saturation Voltage ·High switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially suited for use in high definition CRT display(VCC=12 to 24V) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.