Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max.) @IC= 5A
Good Linearity of hFE
Complement to Type 2SA1263
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Power amplifier applications
Recommend for 40W high fidelity
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isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max.) @IC= 5A ·Good Linearity of hFE ·Complement to Type 2SA1263 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.6
A
60
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC3180
isc website：www.iscsemi.
2SC3180 Datasheet
