Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max.) @IC= 6A
Good Linearity of hFE
Complement to Type 2SA1264
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Power amplifier applications
Recommend for 55W high fidelity
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isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max.) @IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1264 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.8
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC3181
isc website：www.iscsemi.
2SC3181 Datasheet
