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2SC3214 - NPN Transistor

General Description

High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) High Switching Speed Large safe operating area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators,Motor controls,Ultrasonic Oscil

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Large safe operating area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators,Motor controls,Ultrasonic Oscillators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 80 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SC3214 isc website：www.iscsemi.